氮流量对非晶碳膜场致电子发射的影响

INFLUENCE OF NITROGEN FLOW RATE ON FIELD ELECTRON EMISSION OF AMORPHOUS-CARBON FILMS

用微波等离子体化学气相沉积设备,在陶瓷/金属钼薄膜衬底上沉积出了氮掺杂非晶碳膜,分别用扫描电子显微镜(SEM),金相显微镜及Raman谱对样品进行了分析测试,并研究了不同掺杂样品的场致电子发射特性。结果表明:在我们的实验范围内,随着氮流量的增加,发射电流密度增大,阈值电压降低。

Using microwave plasma-assisted chemical vapor deposition system, the nitrogen dopeed amorphaus-carbon films are obtained on the deposited molybdenum films, which are deposited on ceramic (Al2O3). The scanning electron microscopy (SEM), optical microscopy, X-ray diffraction (XRD) and Raman spectrum are used to analyze the obtained. Experimental results show that, when increasing the nitrogen, the eaission current density increases and the turn-on field decreases.