摘要
本文报导了我们用常压MOCVD生长的ZnSe-ZnS应变超晶格的发光特性。我们首次制备了阱宽低达10(?)的ZnSe-ZnS应变超晶格。
We review the development of the semiconductor superlattices, espe ciallythe wide-gapⅡ-Ⅵ strained layer superlattices. We also report the growth of ZnSe-ZnS strained layer superiattices by atmospheric pressure metal-organic chemical vapour deposition(AP-MOCVD), and observe the quantizcd seize effect of the ZnSe-ZnS SLS. We first growthe narrow well with (Lw=10) ZnSe-ZnS SLS. The photoluminescence emission wavelength of this sample is 3850 with N_2-LASER excitation at 77K.
