Zn_(0.04)Cd_(0.96)Te中深能级的红外光电导谱研究

INFRARED PHOTOCONDUCTIVITY SPECTRA OF DEEP LEVELS IN Zn_(0.04) Cd_(0.96) Te

应用红外光电导谱研究半绝缘 p型Zn0 .0 4 Cd0 .96Te中的深能级 ,在温度从 4.2到 16 5K范围内 ,观察到了位于0 .2 4,0 .34 ,0 .38,0 .47,0 .5 5和 0 .80eV处 6个光电导响应峰 .结合 4.2K下光致发光谱的测量结果以及对ZnxCd1-xTe中深能级发光光谱、深能级瞬态谱等已有的研究结果 。

The infrared photoconductivity spectroscopy has been employed to investigate the deep levels in semi-insulating p-type Zn0.04Cd0.96Te. At the temperature ranging between 4.2 and 165K, photoconductivity peaks at 0.24,0.34,0.38, 0.47,0.55 and 0.80eV are observed. In conjunction with the photoluminescence measurement of the sample at 4.2K, the characteristics of the deep levels related to the photoconductivity peaks are discussed.