复合效应对掺杂氧化物透明导电薄膜的影响

Effect of Complexes on Transparent Conductive Oxide Thin Films

首次引入复合效应对不同价态差的掺杂氧化物透明导电 (TCO)薄膜的载流子浓度及其迁移率进行了分析。对于较高温度下制备的 TCO薄膜 ,对载流子迁移率起主要作用的散射机制是带电离子散射和电中性复合粒子散射。带电离子散射迁移率与带电离子的有效电荷数大致呈反比关系 ,在载流子浓度相同的情况下 ,随着复合几率增大 ,价态差分别为 3和 4的 TCO薄膜中的带电离子的平均有效电荷分别趋于 1和 2 ,因此带电离子散射迁移率也随之增大 ,分别趋于价态差为 1和 2的 TCO薄膜的带电离子散射迁移率。而对于价态差为 3的 TCO薄膜 ,由于电中性复合粒子数量较少 ,对载流子的散射最弱 ,因此在复合几率较大的情况下 ,价态差为 3的 TCO薄膜有可能获得比价态差为 1的 TCO薄膜更高的载流子迁移率。

It was the first time using the effect of complexes to analyze the carrier concentration and the mobility of transparent conductive oxide (TCO) thin films with various valence differences between dopant and ion substituted. In TCO films deposited on high temperature substrates, the ionized impurity scattering and the neutral complex scattering are dominant. The ionized impurity scattering mobility is in inverse proportional with the effective charges of impurities. As the probability of donors associated with oxygen ions increases, the ionized impurity scattering mobility in TCO films with the valence difference of 3 or 4 would increase and tend to that in films with the valence difference of 1 or 2, because the average effective charges of impurity ions would be close to 1 or 2. The neutral complex scattering lies on the density of the neutral complexes. There are much fewer electrical neutral incorporative complexes in TCO films with a valence difference of 3 than those in TCO films with a valence difference of 1. Therefore, the mobility in TCO films with a valence difference of 3 may be higher than that with a valence difference of 1.