脉冲激光沉积法制备PZT铁电薄膜及衬底温度对膜的影响

Preparation of Ferroelectric PZT Thin Films by Pulsed Laser Deposition and the Dependence of Substrate Temperature

采用脉冲激光沉积法在Si(10 0 )衬底上制备了Pb(Zr0 .52 Ti0 .4 8)O3 铁电薄膜 ,并用X射线衍射 (XRD) ,扫描电镜 (SEM )对其结构、形貌以及结构随沉积时衬底温度的变化进行了研究。由脉冲激光制备薄膜的机制出发 ,从PbO ,ZrO2 和TiO2 熔融体的化学反应及应力造成能量释放引起的相变两方面分析了铅基铁电薄膜制备时衬底温度的影响。

The preparation of ferroelectric Pb (Zr, Ti) O3 (PZT) thin films by pulsed laser ablation deposition technique was presented. The substrate is single crystal Si (100) and the pulse laser beam is sent from Nd:YAG laser with a wavelength of 532 nm and a frequency of 5 Hz. The microstructure and micrograph of the deposited PZT thin films were studied by X-ray diffraction and scanning electron microscopy respectively. The evolution of microstructure and micrograph with the variation of substrate temperature was given. The effect of substrate temperature on preparation of PZT thin films was discussed in terms of the chemical reaction of laser ablations with the mixture and the phase transformation induced by energy release with the contribution of epitaxial stress, intrinsic stress and thermal stress as well as phase transformation stress.