高分辨率电子能量损失谱在半导体表面研究中的应用

Application of High-resolution Electron-energy-loss Spectroscopy to the Study of Semiconductor Surfaces

低能电子与半导体表面的相互作用能激发带间电子跃迁和 (或 )表面振动 ,因而对背散射电子能量分布的高分辨率测量可望给出与这些激发相关的丰富信息 .近年来的实验研究证实 ,进行这样的电子能量损失测量确能从各种不同半导体得到诸如禁带宽度、表面电子态的能量、表面光学声子的特性、表面原子的成键方式。

Interaction of low energy electrons with a semiconductor surface will result in excitations of interband electron transitions and/or surface vibrations. Probing energy distribution of the back scattered electrons with high resolution is thus expected to provide abundant information about the excitations. Recent experimental studies confirm that such electron energy losses measured from various semiconductor surfaces are indeed representative of many improtant parameters associated with surface atomic and electronic structures, including band gap, distribution of surface electronic states, behavior of surface optical phonons, bonding configurations of surface atoms, products of surface reactions, etc.