掺La透明陶瓷MgAl_2O_4正电子湮没寿命谱的研究

STUDY ON TRANSPARENT CERAMICS MgAl_2O_4 DOPED WITH La BY POSITRON ANNIHILATION

作者采用正电子湮没寿命谱的方法 ,研究了化学配比 (Al2 O3 /MgO)为 2 3和 2的尖晶石透明陶瓷中 ,掺入不同量La后的正电子湮没特性及缺陷情况 ,并且研究了化学配比 (Al2 O3 /MgO)为 2的尖晶石 ,在电子辐照后正电子参数的变化 .发现化学配比为 2 3的样品在低掺杂的情况下出现空位填充现象 ,而化学配比为 2的样品未出现空位填充现象 .并且发现 ,非化学配比的样品没有严格化学配比样品的抗辐照性强 .

The authors use positron annihilation technology research the defects of MgAl 2O 4 doped with La. Its stoichoimetry Al 2O 3/MgO is 2 and 2.3 respectively. The authors also research the electronic irradiation effect of MgAl 2O 4 doped with La and its stoichoimetry Al 2O 3/MgO is 2 The authors discover that some La atoms are doped into lattice when stoichoimetry is 2 3 but this effect is not found when stoichoimetry is 2 The authors also discover that the sample which stoichoimetry is one is difficult to damage by electronic irradiation than the sample which stoichoimetry isn’t one.