摘要
就形成钛酸钡陶瓷PTC效应的表面态进行阐述 ,分析了在居里点 (TC)以上由表面态和介电常数在共同作用下的电阻率猛增几个数量级的原因 ;同时对钛酸钡PTC热敏电阻陶瓷的表面态的组成进行研究 ,认为在钛酸钡PTC陶瓷中表面态主要由钡空位引起 ;提出一种直接测量表面态密度的方法 .
The trap state of BaTiO 3 semiconducting ceramics that has a significant effect on the PTC effect is analyzed. Above the Curie temperature ( T C), the co interaction of the trap state and the dielectric constant on the resistivity jump are studied. A method of the state density measurement is also proposed.
出处
《华中科技大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2001年第A01期25-27,共3页
Journal of Huazhong University of Science and Technology(Natural Science Edition)
关键词
钛酸钡PTC陶瓷
表面态
介电常数
BaTiO 3 semiconducting ceramics
trap state
dielectric constant
