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ZnS:TmF_3薄膜电致发光特性的研究 被引量:1

The Research on the EL Characteristics of ZnS:TmF_3 TFEL Devices
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摘要 为了提高蓝色薄膜电致发光器件 (TFEL)的发光亮度 ,自行配制了氟化铥 (TmF3) ,并制备了以ZnS :TmF3为发光层的薄膜电致发光器件 ,研究了TmF3的掺杂浓度对ZnS :TmF3发光器件发光特性的影响 .实验结果显示 ,当掺杂浓度为 1.2 %mol时 。 In order to increase the electroluminescent brightness of blue thin film electrolumincent device, the ZnS doped with TmF 3 are prepared from solid state reaction and the thin film electroluminescence devices with ZnS:TmF 3 active layer are prepared by electron_beam_evaporation method in our lab. We have investigated the influence of TmF 3 concentration on the electroluminescent characteristics of ZnS:TmF 3 TFEL device. With increasing TmF 3 concentration the relative intensity of the ZnS:TmF 3 increases and reaches maximum. The optimum concentration is at about 1.2% mol.
出处 《北方交通大学学报》 CSCD 北大核心 2001年第3期70-72,共3页 Journal of Northern Jiaotong University
基金 国家自然科学基金资助项目!(5 9982 0 0 1)
关键词 薄膜电致发光 氟化铥 掺杂浓度 硫化锌 发光强度 显示技术 Thin Film Electroluminescence(TFEL) TmF 3 doped concentration
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参考文献2

  • 1[1]Jastrabik L,Mares J, Pacesova S. Study of Noneguivalent Radiative T3+m Centers in ZnS[J]. Journal of Luminescence, 1981,24/25:293-296.
  • 2[2]Shosaku Tanaka. Excitation Mechanism of Tm3+Centers in Zn S Electroluminescent Thin Flims[J].Journal of Crystal Growth,1992,117:997 -1001.

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