摘要
基于生产厂家提供的电参数和特性曲线 ,采用Hammerstein结构宏模型建立了IGBT的器件仿真模型。采用最小二乘法作为模型参数提取的统一方法 ,利用状态变量法对使用IGBT为开关器件的直流斩波电路进行了仿真研究。
In this paper,the Hammerstein model configuration,which includes a nonlinear static block followed by a linear dynamic block,is applied to model the static and dynamic behavior of insulated gate bipolar transistor(IGBT).Using the least squares methods,the parameters can be extracted from the data provided in the device menu.State space method is applied to form the system equations.
出处
《电工电能新技术》
CSCD
2001年第3期5-8,共4页
Advanced Technology of Electrical Engineering and Energy
