合肥同步光源增加光刻基片曝光面积方法研究

Enlarging the Exposure Area in X-ray Lithography for HLS

根据以水平磁场控制束团垂直闭轨和垂直发散角 ,设法增加光刻基片曝光面积的思想 ,对合肥同步辐射光源进行分析 ,提出了适用方案 .指出在合肥同步辐射光源上用两个现有的垂直校正铁 ,只要加上不大的水平磁场 ,即可使光刻基片的曝光面积增大 2 4倍 ,达到所需要求 ,且在该两个校正铁以外的闭轨不发生畸变 .

A method of enlarging the exposure area in soft Xray lithography for HLS is suggested. By using two existent vertical correct magnets with horizontal field less than 100 Gauss, the exposed area of the Xray lithography wafer increases from 3 5mm to 14mm and no distortion occurs in the closed orbit out of the two magnets.