金刚石膜磁阻效应

Magnetoresistive Effect of Diamond Films

在F -S薄膜理论的基础上 ,考虑了晶格散射和杂质散射 ,通过求解驰豫近似下的Boltzmann方程 ,计算了P型单晶半导体金刚石膜 (矩形 )在球形能带下的电导率及考虑金刚石的轻空穴带、重空穴带和分裂带为并联电阻模型时的磁阻。给出了磁阻和金刚石膜厚度、磁场强度、迁移率的关系。研究表明 :金刚石的轻空穴带、重空穴带和分裂带对磁阻的影响各不相同。厚膜的磁阻和块材的磁阻相差不大。磁阻和温度、磁场强度、迁移率有密切关系。

On the basis of F S thin theory and taking the scattering of lattice vibration and impurities into account, the conductivity and the magnetoresistance of p type semiconducting diamond films (strip sample) are derived in spherical energy band and parallel connection model for light hold band,heavy hole band and split off band of diamond by solving the Boltzmann equation in the relaxation time approximation,. The relations between the magnetoresistance and thickness of diamond films,magnetic field strength and mobility are given. The magnetoresistance is influenced differently by light hole band,heavy-hole band and split off band. The deviation of the magnetoresistance is small between thick diamond films and lump. Magnetoresistive effects relate closely with temperature,magnetic filed strength and mobility.