柔性衬底ITO膜的性质与制备参数关系的研究

STUDY ON RELATIONSHIP BETWEEN THE PROPERTIES OF FLEXIBLE ITO FILMS AND FABRICATING PARAMETERS

用偏压磁控溅射法在水冷PPA(PolypropyleneAdipate)聚脂胶片上制备了性能优良的ITO(IndiumTinOxide)透明导电膜 ,对薄膜的光电性质进行了研究。制备样品的相对透过率为 80 %左右、最小电阻率为 6 .3× 10 -4 Ωcm ,与衬底附着良好。当衬底负偏压为 40V时 ,晶粒平均尺寸最大为 5 5nm ,相应地自由载流子霍耳迁移率有最大值为 89 3cm2 /Vs,薄膜的电阻率有最小值。X射线衍射表明薄膜为多晶纤锌矿结构 ,垂直于衬底的C轴具有 [2 2 2 ]方向的择优取向 ,随衬底负偏压的增大 ,沿 [4 0 0 ]方向生长的晶相减少。最佳衬底负偏压取值范围为 2 0～ 40V。XPS分析表明随衬底负偏压的增大 ,薄膜中的氧空位浓度最大 。

Good adherent ITO(indium tin oxide) films with a transmittance of about 80% in visible range and a resistivity as low as 6.3×10-4 Ωcm, were deposited on water-cooled PPA(Polypropylene adipate) substrate by bias RF magnetron sputtering. The grain sizes and conductivities of the films have maximum values in the range of -40 V of the bias applied to the substrate as indicated by AFM and XRD. The Hall mobility of the sample with maximum grain size has maximum value as indicated by Hall measurement. The density of oxygen vacancies increases with the increase of negative bias due to the bombardment of the cations attracted by the bias, and the carrier density increases with the increase of negative bias. The transmittance in the wavelength range of 300-550 nm increases with the increase of negative bias applied to the substrate. All these films have a preferred orientation of [222].