电共沉积InGaAs薄膜材料

ELECTRODEPOSITION OF InGaAs THIN FILM

阐述了电共沉积方法制备发射光波长近于 1 3～ 1 5 μm的InGaAs薄膜材料。用能谱分析仪进行薄膜成分分析 ,用分光光度计和单色仪测量薄膜的透射率 ,同时测量了薄膜I-V特性、导电类型、厚度及其表面形貌 ,分析结果表明该方法是半导体薄膜材料制备的一种新途径。

This paper presents the principle and experimental method of electrodeposition. The radiative wave length of the prepared GaAs film is 1.3-1.5 μm. The composition of the film was analyzed by the energy spectrometer, and the transmission spectrum of the film was measured by the spectrophotometer and monochromator. The V-I characteristic of the conductive type, the thickness of the film and the topography were also measured and analyzed. The results demonstrate that the electrodeposition method is a novel approach of preparing semiconducting film.