摘要
本文采用DC直流溅射的方法研制了FeSiAl合金薄膜电感 ,并探讨了输入功率、靶与基板间距离等溅射成形条件及成膜速率的关系及其对薄膜电感性能的影响 ,同时还分析了不同状态下的FeSiAl合金薄膜的结构 ,讨论了产生DO3
Thin Fe Si Al film inductors were developed by DC sputtered method The relationship between the sputtering conditions such as input power and the gap between the target and substrate and the deposition rate and its influence on the performance of film inductors were studied The structure of Fe Si Al alloy films in the different state and the best process produced the DO 3 ordered structure are discussed and analyzed
出处
《金属功能材料》
CAS
2001年第3期17-21,共5页
Metallic Functional Materials
