摘要
本文利用超高真空化学气相沉积系统 (UHV CVD)在 72 0℃Si(10 0 )衬底上进行了实时B掺杂的硅外延。采用二次离子质谱仪 (SIMS) ,傅立叶红外光谱 (FTIR) ,扩展电阻仪 (SRP)对外延层的性能进行研究。研究表明 :72 0℃生长时已经实时掺入了B原子 ,10 0 0℃退火 5分钟后 ,外延层中B原子被激活 ,浓度达到 10 17～ 10 18cm-3 。
The real time B doped Si epilayers on diameter 3 inch Si(100)substrate were grown at 720℃ by ultrahigh vacuum chemical vapor deposition system.The properties of epilayers were characterized by secondary ion mass spectrum(SIMS),Fourier transform infrared specteroscopy (FTIR)and spreading resistance profile(SRP).The abrupt transition region and B doped concentration of 10 17 ～10 18 cm -3 were achieved after annealed 5 minutes at 1000℃.
出处
《材料科学与工程》
CSCD
北大核心
2001年第2期33-35,共3页
Materials Science and Engineering
基金
浙江省计划项目资助
