1.3μm InGaAsP激光器电光采样技术测量超快速电信号

Electro-optic Sampling Measurements of Ultrafast Electrical Signals Using an InGaAsP Laser at 1.3 μm

研究超高速器件和微波集成电路瞬态特性需要在时间畴测量非常快的电信号,这对测量手段的时间分辨率提出了更高的要求。以实用的高速采样示波器(Tck7104,带S4采样头,上升时间为25ps)已经不能完全满足测量的需要。我们建造了1.3 μm InGaAsP激光器超高速电光采样测试装置,采样光源是1.3 μm增益开关InGaAsP/IaP激光器。如果用以Ⅲ-V族材料为衬底的高速集成电路芯片代替微带采样器。

We have demonstrated an electro-optic sampling system for the measurements of ultrafast electrical waveforms at gigahertz repetition rates. The system uses a gain-switched InGaAsP injection laser as a source of sampling pulses and has a temporal resolution of 16.7 ps.