CdTe单晶薄膜的热壁外延

CdTe Single Crystal Film Grown by HWE

CdTe不仅是制作核辐射探测器的重要材料,而且还可用来制作太阳能电池,是外延Hg1-zCdzTe的理想衬底。由于很难获得大块完美的单晶,为此,人们对CdTe单晶外延层的生长进行了广泛的研究。 热壁外延（Hot Wall Epitaxy,缩写为HWE）是一种真空沉积薄膜的方法。其主要特点是在蒸发源和衬底之间加了一个套筒,并加热,成为热壁。目的在于能生长出完美的单晶外延层,形成一个很接近热力学平衡的沉积系统,迫使从蒸发源出来的原子或分子指向衬底。

The present paper covers a simple HWE apparatus and the technology of using this apparatus to grow CdTe single crystal epilayers on GaAs(100) plane. The analyses of scanning electron microscope, X-ray diffraction and PL spectra show that the epilayer of CdTe single crystal is perfect. The interface between CdTe and GaAs was analysed by XPS.