摘要
用光电响应方法测量了 pH =8.4的硼砂 -硼酸缓冲溶液中碳钢电极上钝化膜的光电化学行为 .通过研究光响应电流iph与入射光能量hυ(波长λ)和外加扫描电位U的关系 ,指出碳钢电极在中性溶液中形成的钝化膜具有n型半导体的性质 .半导体特征参数 (禁带能量Eg 和平带电位Ufb)表明 ,钝化膜为晶形和无定形 (主要为无定形 )γ -Fe2 O3 组成的无序结构 ,其禁带能量为 2 .0 1eV(晶形 )和 2 .34eV(无定形 ) ,平带电位为 - 0 .10V ,这和钝化膜的X射线衍射 (XRD)实验结果一致 .
The photoelectrochemical behavior of passive film formed on carbon steel in neutral borax buffer solution was studied by using photocurrent response method.The presence of negative photocurrent response under the illumination of certain incidence light indicates that the passive film formed on carbon steel has the characteristics of n type semiconductor,which was proved to be mainly composed of amorphous γ Fe 2O 3 through XRD and the identification of its two parameters of semiconductor's characteristics:band gap E g, 2.34 eV,and flat potential U fb ,-0.10 V.Furthermaore,a relationship formula between the photocurrent and the potential applied on the amorphous semiconductor is also deduced.
出处
《同济大学学报(自然科学版)》
EI
CAS
CSCD
北大核心
2001年第5期602-606,共5页
Journal of Tongji University:Natural Science