LP-MOCVD生长InGaAlP外延层中In并入效率的研究

Study on the In Incorporation Efficiency in LP-MOCVD Growth of InGaAlP

分析了In原子在InGaAlP外延生长表面的扩散、并入及脱附过程 ,给出了In并入外延层的效率表达式 .依据该表达式 ,解释了生长速率、生长温度及生长压力等生长参数对LP_MOCVD生长InGaAlP外延层中In组分的影响 .

In this paper, the diffusion process, the incorporation process and the adsorption process of In atom on the growth surface of InGaAlP have been analyzed. The In incorporation efficiency formula is presented. On the basis of this formula, the effects of the growth parameters, such as growth rate, temperature and gas pressure on the In composition of InGaAlP epitaxical layer are fully explained.