脉冲激光烧蚀沉积ZnSe薄膜的研究

Pulsed Laser Ablation Deposition of Crystalline ZnSe Thin Films

用 2 48nm的KrF准分子脉冲激光烧蚀ZnSe靶材沉积ZnSe薄膜。靶采用多晶ZnSe片 ,衬底采用抛光GaAs(10 0 )。衬底预处理采用化学刻蚀和高温处理。原子力显微镜 (AFM )观察显示在GaAs(10 0 )沉积的ZnSe薄膜的平均粗糙度为 3～ 4nm。X射线衍射 (XRD)结果表明ZnSe薄膜 (4 0 0 )峰的半高宽 (FWHM)为 0 4°～ 0 5°。对激光烧蚀团束的四极质谱分析表明烧蚀团束主要由Zn ,Se和 2Se组成 ,并由此推断ZnSe薄膜的二维生长模式。

Crystalline ZnSe thin films have been deposited on polished GaAs(100) substrates by pulsed laser ablation of a single target of polycrystalline ZnSe solid using KrF 248 nm excimer laser. Chemical etching and high-temperature heating were used for pretreatment of substrates. Atomic force microscopy (AFM) shows that the average roughnesses of ZnSe thin films can reach 3-4 nm. X-ray diffraction (XRD) shows that FWHM of ZnSe (400) peaks are 0.4°-0.5°. Analysis of quadruple mass spectroscopy for laser ablated plumes indicates that the plumes consist of Zn, Se and 2Se. It was deduced that ZnSe thin film was grown in two dimensional mode.