摘要
The design and fabrication of a RF MEMS switch is reported for the first time in China.The switching element consists of a thin metallic membrane,which has the metal-isolator-metal contact and a capacitive shunt switch as single-pole single-throw.When an electrostatic potential is applied to the membrane and the bottom electrode,the attractive electrostatic force pulls the metal membrane down onto the bottom dielectric.The switch characteristics,such as insertion loss and isolation,depend on the off and on-capacitance.The test results are as follows:the pulldown voltage is about 20V;the insertion loss is less than 0 69dB from DC to 20GHz in the up-state;the isolation is more than 13dB from 14 to 18GHz and 16dB from 18 to 20GHz in the down-state.
描述了 DC— 2 0 GHz射频 MEMS开关的设计和制造工艺 .开关为一薄金属膜桥组成的桥式结构 ,形成一个单刀单掷 (SPST)并联设置的金属 -绝缘体 -金属接触 .开关通过上下电极之间的静电力进行控制 ,其插入损耗及隔离性能取决于开态和关态的电容 .测试结果如下 :射频 MEMS开关驱动电压约为 2 0 V,在“开”态下 DC— 2 0 GHz带宽的插入损耗小于 0 .6 9d B;在“关”态下在 14— 18GHz时隔离大于 13d B,在 18— 2 0 GHz时隔离大于 16 d B.本器件为国内首只研制成功的宽带射频
