摘要
研究了辐射环境温度、辐射剂量率、退火温度和退火偏置对 CC40 0 7NMOS器件阈值电压的影响 .研究发现 ,低温 (- 30℃ )辐照感生的氧化物陷阱电荷比室温 (2 5℃ )多 ,界面态电荷比室温要少 ;受不同 γ剂量率辐射时 ,阈值电压的漂移程度不一样 ,在总剂量相同情况下 ,辐射剂量率高时 ,阈值电压的漂移量也大 ;辐照后 ,NMOS器件 10 0℃退火速度要大于 2 5℃退火速度 ,+5 V栅偏压退火情况要大于浮空偏置情况 .
The influences of environments with different radiation,γ dose rates and temperatures,as well as those of the annealing bias on the threshold voltage of CC4007 NMOS device have been reported is this paper.It is found that the radiation-introduced oxide trapped charges at a low temperature (-30℃) are more than those at room temperature (25℃),while the radiation-introduced interface trapped charges at a low temperature (-30℃) are less than those at room temperature (25℃).When the NMOS device is radiated by γ-rays,with different dose rate the shift of threshold voltage is also different,which is larger under a high dose-rate condition than that under a low dose-rate one,if the total dose radiation is same.After radiation,the annealing speed of NMOS device at 100℃ is faster than that at 25℃ temperature.The annealing speed of NMOS device under 5V bias is greater than that without bias.The above-mentioned phenomenon have been analyzed.[KH7/8D]
