摘要
报道了具有先进双极关键技术特征的多晶硅发射极集成电路的工艺 ,重点介绍了用难熔金属氮化物 (Zr N )作为新的刻蚀掩模实现器件的硅深槽隔离 ;E- B间自对准二氧化硅侧墙隔离 ;快速热处理实现多晶硅发射区浅结及薄基区 ;E、 B、 C区自对准钴硅化物形成 ,明显地减少串联电阻和双层金属 Al间可靠互联等先进的工艺研究 .用此套工艺技术研制出工作频率达 3.1GHz的硅微波静态分频器实验电路 ,集成度为 6 0 0门的双层金属 Al的ECL移位寄存器电路 ,最高移位频率达 45 0 MHz. 19级环振电路平均门延迟小于 5 0
The polysilicon emitter circuits with advanced bipolar technologies have been reported,with the emphasis on the refractory metal nitride(ZrN) as the etching mask to realize the deep-trench isolation,emitter-base oxidation spacer self-aligned isolation,Rapid Thermal Annealing(RTA) to achieve the shallow junction and thin base region,self-aligned formation of the cobalt silicide in E,B and C areas to reduce the series resistance considerably and the double metallization interconnection to improve the reliability.Based on the above technologies,a static microwave frequency divider that is operated up to 3 1GHz,as well as a 600-gate double metallization Al ECL shift register with operating frequency up to 450MHz are fabricated.As for a 19-stage ring oscilator,the delay per stage is within 50ps under -5V.
关键词
多晶硅发射极
集成电路
工艺
polysilicon emitter
high speed
integrated circuits
process
