期刊文献+

铁电薄膜及其制备技术 被引量:4

Ferroelectric Thin Films and the Related Processing Techniques
下载PDF
导出
摘要 具有铁电性且厚度尺寸为数十纳米到数微米的铁电薄膜具有良好的压电性、热释电性、电光及非线性光学特性 ,在微电子学、光电子学、集成光学和微电子机械系统等领域有着广泛的应用前景 ,是目前国际上新型功能材料研究的热点之一。通过综述铁电薄膜及其制备技术研究的新进展 ,给大家介绍铁电薄膜材料的基本特征、性能及应用 ,并重点分析铁电薄膜主要制备技术的优缺点 ,指出了目前铁电薄膜及其制备技术研究需要重点解决的一些问题。 Ferroelectric thin film is one of the functional material with attractive applied prospects in microelectronics,photoelectronics,integration optics and microelectronic machine system due to its good properties of piezoelectricity,thermoelectricity electrooptic and nonlinear photics.Recent studies on ferroelectric thin films and the related processing techniques are reviewed.The characteristics,the processing techniques,and the application of ferroelectric thin films are described in this paper.The advantages and disadvantages of different processing methods for ferroelectric thin films are discussed.Some key problems are outlined.
作者 王华
出处 《桂林电子工业学院学报》 2001年第2期47-51,共5页 Journal of Guilin Institute of Electronic Technology
关键词 铁电薄膜 制备技术 溅射 脉冲激光沉积 ferroelectric thin film,processing technology,sputtering,PLD,Sol Gel,MOCVD
  • 相关文献

参考文献3

二级参考文献19

  • 1 Lines M E,Glass AM.Principles and application of ferroelectrics and related materials[M].CarendonPress,Oxford,1977
  • 2 Hench L L and West J C.Principles of electronic ceramics[M].Wiley,NewYork,1990
  • 3 Jone R E,Maniar P D.Ferroelectric non-volatile memories for low-voltage,lowpower application[J].Thin Solid Films,1995,270:584~588
  • 4 Bo Jiang C.Sudhama,Rajesh Khamankar,et al. Effects of noonliner stoage capacitoron DRAM READ/WRITE[J]. IEEE Electronic Devices Letters,1994,15(4):126~128
  • 5 Scott J F and Araujo C A.Ferroelectric memories[J].Science,1989,246:1400~1405
  • 6 Scott J F. Ferroelectric thin films in integrated microelectric devices[J].Ferroelectrics,1992,133:47~50
  • 7 Orlando Auciello,James F.Scott and Ramamoorthy Ramesh[J].The physics offerroelectric memories.1988,6:22~27
  • 8 Sinharoy S,Buhay H,Lampe D R,et al.Integration of ferroelectric thin films intononvolatile memorys[J].Joumal of Vacuum Science & Technology,1992,A10(4):1554~1561
  • 9 Lampe D R,Adams D A,Austin M,et al.Processing integration of the ferroelectricmemory FFETs(FEMFETs) for NDRO FerRAM[J].Ferroelectrics,1992,133:61~64
  • 10 Bondurant D.Ferroelectric RAM memory family for critical data storage[J].Ferroelectrics,1990,112:273~282

共引文献19

同被引文献58

引证文献4

二级引证文献32

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部