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新型功率MOS器件的结构与性能特点 被引量:5

The structural and performance features of power MOS devices with new structures
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摘要 电力电子器件的结构决定其性能,而器件的性能又决定电路的性能。根据此原理,分析比较了近十年来10种实用的具有新结构的功率MOS器件的结构与性能特点。 The performance of power electronic devices depends on their structure, and the performance of power electronic circuits depends on the performance of power electronic devices. On the basis of the principle, the structural and performance features of ten practical power MOS devices with new structure which developed in recent ten years are analyzed and compared.
作者 华伟
机构地区 北方交通大学
出处 《半导体技术》 CAS CSCD 北大核心 2001年第7期27-30,36,共5页 Semiconductor Technology
关键词 电力电子器件 绝缘栅双极晶体管 功率MOSFET 场效应晶体管 power electronic devices IGBT power MOSFET
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参考文献6

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同被引文献15

  • 1王正元.IGBT向大容量演变的若干问题[J].电力电子,2004,2(5):75-79. 被引量:4
  • 2梁苏军.IGBT-新概念、新模型、新器件[J].电力电子,2005,3(1):11-20. 被引量:1
  • 3许平.IGBT器件新结构及制造技术的新进展[J].电力电子,2005,3(1):21-26. 被引量:8
  • 4亢宝位.IGBT发展概述[J].电力电子,2006,4(5):10-15. 被引量:18
  • 5Ste'phane Lefebvre and Francis Miserey. Analysis of GIG NPT IGBT's Turn- off Operations for High Switching Current Level, IEEE Trans on Electron devices, 1999-5-1042.
  • 6UDREA F. 1.2 kV Trench Insulated Gate Bipolar Transistors ( IGBT' s) with ultra-low On-Resistance [ J ]. IEEE dectron Device Letters,1999, 20(8) :428-430.
  • 7Huang S, AMARATUNGA G A J. A dual-channel IEGT [J]. Miercelectronies Journal, 2001, 32(5) :755-761.
  • 8GOO KANG, SANGSIG KIN. Simulation of a new lateral trench IGBT employing effective p + diverter for improving latch-up characteristics [J]. Microelectronics Journal, 2001, 32(5):749-753.
  • 9FLORIN UDREA. The Trench Insulated Gate Bipolar Transistor-a high power switching device [ J ]. Microelectronics Journal,1997, 28(1): 1-12.
  • 10NARESH THAPAR, JAYANT BALIGA B. An experimental evaluation of the on-state performance of trench IGBT designs[J].Solid State Electronics, 1998, 42(5):771-776.

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