单晶硅非平衡磁控溅射等离子体基离子注入钼的XPS研究

XPS Studies of Mo Implanted into Single-crystal Si by PBII Using UBM Sputtering

采用非平衡磁控溅射及射频激励产生金属等离子体 ,在单晶基体Si上等离子体基离子注入钼。选择不同的靶基距 ,即不同的Mo沉积速率 ,研究了沉积速率对Si中Mo注入层的影响 ,用X光电子能谱 (XPS)对注入层中Mo的深度分布和化学态进行了分析。结果表明 :注入过程由两部分组成 ,即反冲注入 (包括级联碰撞引起注入原子的位移 )和金属的纯注入。随靶基距增大 ,沉积速率减小 ,样品表面沉积层厚度减小 ,注入层增厚。靶基距为 30 0mm时 ,纯注入层厚度与理论计算值接近。XPS多道分析判断有MoSi2

The implantation of Mo into single-crystal Si substrate is carried out by PBII using unbalanced magnetron (UBM) sputtering and RF stimulated metal plasma. The different magnetron distances between the target and the substrate (dt-s), namely the different deposition rates of Mo, are chosen to study the effects of Mo deposition rate on the implantation characteristics of Mo. The profiles and the chemical states of Mo are determined by X-ray photoelectron spectroscopy (XPS). The results show that the process of this kind of Mo implantation can be divided into two steps: the recoil implantation (the collision cascade) of Mo and the pure implantation of Mo. The deposition layer decreases but the implantation layer increases with the increase of dt-s because the deposition rate decreases. When the dt-s is 300 mm, the thickness of pure implantation layer is closed to the value of the simulation calculation. The MoSi2 phase can be inferred from the presence of Mo-Si bond in the spectra acquired by the multiplex analysis of Mo.