摘要
通常在托卡马克第 1壁沉积 1层B膜 ,以降低托卡马克等离子体的O杂质。在HT 7第 1壁位置处放了几个石墨样品 ,它们与HT 7一起硼化。硼化后取出部分样品膜 ,剩余样品留在真空室接受聚变等离子体的轰击。对鲜膜和轰击膜进行XPS分析 ,发现在成膜过程中B膜开始吸O ;等离子体轰击时 ,B膜进一步吸O。O在膜中与B以化合态B2 O3 形式存在。并对实际中存在的一些问题进行了探讨。
The boron film coated on plasma facing walls has been utilized to reduce the oxygen impurity level by gettering.In this study,several graphite samples were placed at the same radius as the first wall in HT 7 superconducting Tokamak.They were boronized with the HT 7 first wall and some of them were bombed by HT 7 plasma.Both the fresh film and the bombed film were analyzed by XPS.The oxygen was trapped during the a B/C∶H film deposition and under the plasma bombing.The oxygen was chemically bonded with boron forming B 2O 3.Some questions concerning the film are also be discussed.
出处
《真空科学与技术》
EI
CAS
CSCD
北大核心
2001年第3期223-225,共3页
Vacuum Science and Technology