摘要
研究了真空热蒸发制备CdTe薄膜的光电性能以及微结构、化学组成和成膜机理。通过X射线衍射、透射电镜电子衍射、X光电子能谱和光、暗电导测试等分析手段 ,系统表述了薄膜的组成、结构、表面氧化与真空热蒸发工艺的关系。指出基板温度是决定CdTe薄膜组成和结构的关键参数 ,15 0℃左右制备的CdTe薄膜具有最佳光电性能和成膜质量。另外 。
Microstructure,chemical composition,film growth mechanism and photoelectric properties of CdTe films grown by vacuum sublimation were studied.Through analysis of XRD,TEM,XPS and photo/dark conductivity,the relation between substrate temperature and microstructure,composition and film oxidation was described systematically.The substrate temperature is the key parameter to decide the film quality.150 ℃ is confirmed to be the most suitable substrate temperature to obtain the film with the best photoelectric and physical properties.Furthermore,the mechanisms of film oxidation and film deposition were preliminarily discussed.
出处
《真空科学与技术》
CSCD
北大核心
2001年第3期229-232,共4页
Vacuum Science and Technology
基金
国家自然科学基金资助项目! (6 9890 2 30 )
