摘要
虽然采用常规的热反应蒸发法就可以在约 35 0℃的玻璃基底上制备出性能优良的In2 O3∶Mo(IMO)薄膜 ,但是随着基底温度的降低 ,IMO薄膜的电导率和可见光透射比都迅速减小。通过高频放电在反应气体中加入O3 后 ,可以在室温下将In充分氧化成In2 O3,极大地改善了IMO薄膜的透明性。而且 ,IMO薄膜的结晶程度也得到了小幅度提高 ,这有利于提高薄膜电导率。在不加热基底的情况下 (约 30℃ ) ,制备的约 40 0nm厚的IMO薄膜的电阻率小于 5× 10 - 2 Ω·cm ;在基底温度为10 0℃时电阻率可以小于 2× 10 - 3 Ω·cm ;同时它们在可见光区域的总平均透射比 (含 1 2mm厚载玻片基底 )都超过 0 8。
The high quality transparent conductive thin film In2O3:Mo (IMO) can be prepared by normal thermal reactive evaporation on the substrate at about 350°C, but the electrical conductivity and the transmittance of the IMO film are deteriorated seriously when the temperature of substrate decreases. With ozone produced form high frequency discharge in oxygen, the oxidation of indium and the transparency of the IMO film are enhanced dramatically even on an unheated substrate, and the crystallization of IMO is improved slightly. The transparent IMO films with the electrical resistivity of less than 5×10-2 Ω·cm and less than 2×10-3 Ω·cm were prepared on glass slides at about 30°C and 100°C respectively. The average total spectral transimittivity of the IMO film and the glass substrate in visible region was over 80%.
出处
《真空科学与技术》
EI
CSCD
北大核心
2001年第4期259-262,268,共5页
Vacuum Science and Technology
