摘要
利用变角X射线光电子谱对氧等离子体处理前后氧化铟锡ITO薄膜的表面化学状态进行了表征。实验发现用溶剂清洗之后的ITO薄膜表面存在一层厚度大约为 0 7nm的非导电碳氢化合物污染层。氧等离子体处理方法可有效地消除C污染 ,而残存的少量污染C被部分氧化形成含羰基和羧基的化学物种。氧等离子体处理不仅提高了约 5 0nm深度范围内的ITO薄膜表层中O的总体含量 ,更重要的是提高了膜层中O2 - 离子氧种的含量 ,改变了膜层化学结构 ,使得ITO薄膜表面的导电性能降低 。
The surface chemical states of indium tin oxide (ITO) thin films before and after oxygen plasma treatment were characterized with angle dependent X-ray photoelectron spectroscopy. A thin non-conducting layer of carbon contamination, about 0.7 nm in thickness, formed on ITO thin film surface cleaned only with the solvent, was observed. Oxygen plasma treatment can effectively remove this carbon contamination and considerably enhance the oxygen content of the films. Most importantly, the treatment raises the ratio of O2-, lowers the surface conductivity and markedly improves the homogeneity of the chemical structure of ITO thin films up to a depth of 5.0 nm.
出处
《真空科学与技术》
EI
CSCD
北大核心
2001年第4期263-268,共6页
Vacuum Science and Technology
基金
国家自然科学基金资助项目 (2 9875 0 13)
