质点网格法电感耦合等离子体数学模型

The Mathematical Model of Particle in Cell of the Inductively Coupled Plasma

建立了一个研究电感耦合等离子体源 (ICPS)特性的数学模型 ,叙述了质点网格 (PIC)法的原理。给出了PIC法的计算方法 ,指出PIC法必须与蒙特卡罗碰撞 (MCC)模型和鞘层模型相结合 ,才能更准确地对ICPS进行模拟。文中讨论了不同参数 (天线的位置和匝数 ,反应室高宽比等 )对等离子体密度分布和电场强度分布的影响。根据模拟的结果 ,提出了改善等离子体均匀性的方法 ,这对高密度平面等离子体源的设计具有重要意义。

A mathematical model is developed to study the properties of the inductively coupled plasma sources(ICPS). The principle of the particle in cell (PIC) is described in more detail. Calculation method of PIC is given.We suggest that only when PIC is combined with Monte Carlo collision(MCC) and sheath model ,can it more precisely simulate ICPS. Influence of different parameters (the antenna location, number of turns of antenna and aspect ratio of reactor and so on) on plasma density distribution and electric field distribution is discussed.Based on the results of the simulation, the methods that may improve the uniformity of the plasma density are suggested. It may be of interest in the design of the high density planar plasma source.