摘要
通过电子自旋共振实验、红外光谱和透射 反射谱等手段 ,系统地研究了CH4+SiH4和C2 H2 +SiH4两种不同气源制备的具有高氢含量的a Si1 xCx∶H薄膜的微结构及其随退火温度的变化 ,用网络再构和化学键断裂竞争过程探讨了微结构随退火温度的变化规律。
The microstructures of hydrogenated amorphous silicon carbon alloy films with high hydrogen content prepared by plasma enhanced chemical vapor deposition from CH 4+SiH 4 and C 2H 2+SiH 4 mixtures were studied with electron spin resonance,infrared spectroscopy and transmittance reflectance spectroscopy.The microstructures of a Si 1 x C x ∶H samples and the dependence of the microstructure of a Si 1 x C x ∶H samples on the annealing temperatures have been analyzed by competing the network rearrangement and hydrogen chemical bond breaking.
出处
《真空科学与技术》
CSCD
北大核心
2001年第4期336-341,共6页
Vacuum Science and Technology