硅基PtSi纳米薄膜制备及应用研究进展

New development on preparation and application of PtSi nanometer thin film on silicon substrate

ＰｔＳｉ红外探测器是一种重要的光电器件．在军事和民用方面均起着非常重要的作用。高质量硅基ＰｔＳｉ 薄膜的制备是高性能器件研制的基础。本文介绍了溅射、分子束外延、脉冲激光沉积和激光分子束外延等制备ＰｔＳｉ 薄膜的方法。并评述了ＰｔＳｉ红外探测器的最新应用研究进展及发展趋势。

PtSi infrared detector is an important infrared photoelectric device, which plays an important role in both military affairs and civil aviations. The preparation of high quality PtSi thin films is the foundation of superior performance devices. In this paper, the preparing techniques of PtSi thin film are introduced, including the sputtering, molecular beam epitaxy(MBE), pulsed laser deposi- tion(PLD), Laser molecular beam epitaxy(L-MBE). In addition, the progress and developing trends of PtSi infrared detectors are discussed briefly.