CdTe/CdMnTe多量子阱的生长和激子复合动力学性质的研究

Epitaxial growth and exciton recombination properties of CdTe/Cd_（0.8）Mn_（0.2）Te quantum wells

用分子束外延在ＧｅＡｓ衬底上生长了 ＣｄＴｅ／Ｃｄ０．８Ｍｎ０．２多量子阱结构。利用Ｘ射线衍射（ＸＲＤ）、低激发密度下的ＰＬ光谱和变密度激发的 ｐｓ时间分辨光谱研究了 ＣｄＴｅ／ＣｄＭｎＴｅ多量子阱的结构和激子复合特性。在变密度激发的ｐｓ时间分辨光谱中，发现不同激发密度下发光衰减时间不同，认为它的机理可能是无辐射复合引起的。

CdTe/Cd0.8 Mn0.2 Te quantum wells were grown by molecular beam epitaxy on substrate GaAs. The structure and exciton optical properties in CdSe/CdZnSe MQWs are investigated by means of XRD spectra, photoluminescence spectra with low excitation power 77 K and time-resolved photoluminescence spectra with different excitation power. The exciton emission linewidth is about 9nm at 77K. When weaker excitation was used, radiative recombination decay time of the exciton was reduced as the excitation intensity was decreased, the results indicated that the dominant mechanism may be quenching of exciton emission by impurities and defects.