摘要
采用空气中一次烧成工艺,研究了氧化温度对SrTiO_3晶界层电容器试样的介电常数ε,绝缘电阻率ρ及介质损耗tgδ的影响;对试样进行了TEM分析,直接观察到存在于多个晶粒交汇处的Ti_nO_(2n-1)第二相;提出了不同氧化温度下的晶界结构模型,较好地解释了试样介电常数随氧化温度的降低而单调增大的变化规律。
The effects of oxidizing temperature on dielectric constant ε, resistivity ρ and loss factor tgδ of SrTiO_3, boundary layer capacitors single-fired in air were investigated. The Ti_nO_(2n-1) Magneli phases precipitating at multiple grain junctions were directly observed by TEM. The models of grain boundary under different oxidizing temperatures were suggested. The regularity that the dielectric constant of the specimens increases monotonically with the decrease of the oxidizing temperatures was satisfactorily explained.
关键词
晶界层电容器
氧化温度
一次烧成
钛酸锶
性能
SrTiO_3, boundary layer capacitors, oxidizing temperature, single-fired
