摘要
在 Ar和 O2 气体中 ,基片温度在 15 0～ 40 0℃的条件下 ,用直流磁控溅射的方法可以制备纳米晶透明导电薄膜。实验利用 TL M模型测试了纳米晶 Sn O2 透明导电薄膜的方块电阻。
Nanometer tin oxide transparent conducting thin films are grown by the method of the direct current magnetron sputtering in a mixture gas of Ar and O 2, and substrate temperature 150～400℃. In this paper, the contact properties of the films are characterized by transmission line model. The sheet resistance and specific contact resistance of nanometer SnO2 thin films are measured. The adhesive strength between the electrodes and SnO 2 thin films is investigated by scratch test after annealing.
出处
《光学技术》
CAS
CSCD
2001年第4期346-347,共2页
Optical Technique
基金
国家留学回国人员科研启动基金资助项目
关键词
氧化锡薄膜
纳米晶
电极
传输线模型
接触特性
nanometer SnO 2 thin films
electrodes
transmission line model
contact properties
