氮化镓基固态器件的研究进展

Development of GaN-based solid-state devices

ＧａＮ是大功率和高温半导体器件的理想化合物半导体材料，具有宽禁带、高击穿电压、异质结沟道中高峰值电子漂移速度和高薄层电子浓度。本文着重阐述了宽禁带Ⅲ－Ⅴ族化合物半导体器件的研究进展。

The group Ⅲ-Ⅴ nitride materials are ideal for high power and high temperature devices with their large energy band-gap, high breakdown voltage, high peak electron velocity and high electron sheet density in channels when used in a heterostructure. Major developments in wide gap Ⅲ-Ⅴ nitride semiconductors are described in this paper.