摘要
空洞型 ( Void)原生缺陷在大直径直拉硅单晶中的重要性日渐突出。本文在论述大直径硅单晶中 Void缺陷基本性质的同时 ,详细综述了这类缺陷的控制方法以及它与轻元素 (氧、氮、碳、氢 )杂质的相互作用 ,并简要讨论了关于 Void缺陷的研究方法和今后的研究方向。
The as-grown Void-type defects have received intensive attentions due to their effects on the quality of large diameter Czochralski silicon crystals.This paper is an overview on the properties of Void-type defects,the control of the defects and the interactions between Void-type defects and light element impurities including oxygen,nitrogen,carbon,hydrogen.Furthermore,the important issues on the further investigations of Void-type defects are pointed out in this paper.
出处
《半导体情报》
2001年第3期33-38,共6页
Semiconductor Information
基金
国家自然科学基金重点项目资助
