Na TPB修饰ISFET制作Drug FET的研究

Study on the Ion Sensitive Field Effect Transistor Modified with NaTPB to Make Drug FET

用四苯硼钠 (NaTPB)修饰离子敏感效应晶体管 (ISFET)制成药物敏感场效应晶体管(DrugFET) ,具有良好的能斯特响应 ,斜率为 58mV/pC以上 ,线性范围为 1 0× 10 - 1～ 1 0× 10 - 5mol/L ,适宜的pH范围为 3 0～ 5 0。

The ion sensitive field effect transistor(ISFET)modified with NaTPB is presented,and a kind of drug FET is made.The sensor exhibits Nernst Response for vitamin B 6 with a slope of 58mV/decade over the concentration range of 1 0×10 -1 ～1 0×10 -5 mol/L at pH of 3 0～5 0.