Modeling Thermodynamics of Smart Cut Process

智能剥离工艺的热动力学模型(英文)

A thermodynamic model of hydrogen induced silicon surface layer splitting with the help of an oxidized silicon wafer bonded is proposed.Wafer splitting is the result of lateral growth of hydrogen blisters in the entire implanted hydrogen region during annealing.The blister growth rate depends on the effective activation energies of both hydrogen complex dissociation and hydrogen diffusion.The hydrogen blister radius was studied as the function of annealing time,annealing temperature and implantation dose.The critical radius was obtained according to the Griffith energy condition.The time required for wafer splitting at the cut temperature was calculated in accordance with the growth of hydrogen blisters.

提出了注氢硅片表面借助键合氧化硅片进行剥离的热动力学模型 ,这种剥离现象是退火过程中氢离子注入区氢气泡横向增长的结果 .氢气泡的增长速率依赖于氢复合体分解和氢分子扩散所需的激活能 ,氢气泡的半径是退火时间、退火温度和注氢剂量的函数 .氢气泡的临界半径可根据 Griffith能量平衡条件来获得 .根据氢气泡增长的这一临界条件 。