低剂量SIMOX圆片表层硅缺陷密度

Dislocation Density in Top Silicon Layer of Low Dose SIMOX Wafer

用增强化学腐蚀法研究了低剂量 SIMOX- SOI材料表层硅质量与实验参数的关系 .结果表明 ,注入剂量和能量对表层硅质量有明显影响 .通过对注入剂量和能量的优化 ,表层硅线缺陷密度可低于 10 4cm- 2 .在注入能量为16 0 ke V时 ,获得低线缺陷密度对应的注入剂量为 5 .5× 10 1 7cm- 2 左右 ,当注入剂量为 4.5× 10 1 7cm- 2 ,获得低线缺陷密度对应的注入能量为 130 ke

Modified Secco technique is employed to detect the threading dislocation in low dose SIMOX wafers.It is found the implantation dose and the energy have remarkable influence on the quality of the top silicon layer.Lowest dislocation density of 10 4cm -2 is detected in the low dose SIMOX SOI wafer with optimized fabrication parameters.In addition,at the ion energy of 160keV,the lowest dislocation density is obtained at the optimized dose of 5 5×10 17 cm -2 ,while at the dose of 4 5×10 17 cm -2 ,the lowest dislocation density is achieved at the optimized ion energy of 130keV.[KH8/9D]