摘要
研究了通过多晶硅栅注入氮离子氮化 10 nm薄栅 Si O2 的特性 .实验证明氮化后的薄 Si O2 栅具有明显的抗硼穿透能力 ,它在 FN应力下的氧化物陷阱电荷产生速率和正向 FN应力下的慢态产生速率比常规栅介质均有显著下降 ,氮化栅介质的击穿电荷 (Qbd)比常规栅介质提高了 2 0 % .栅介质性能改善的可能原因是由于离子注入工艺在栅 Si O2 中引进的
The nitridation technique of the thin gate SiO 2 is reported by using the nitrogen ion implantation through the poly silicon gate.It shows that the thin gate SiO 2 after nitridation can effectively suppress the boron penetration.The generation rate of the charge traps under a positive/negative FN stress and the slow state under the positive FN stress are significantly improved.The charges to breakdown of the nitrided thin gate SiO 2 increase 20%,compared with the conventional ones.
基金
国家自然科学基金资助项目
关键词
氮离子注入
栅介质
二氧化硅
薄膜
nitrided thin gate SiO 2
nitrogen ion implantation
boron penetration
FN stress
