摘要
采用平面选择注入隔离工艺制作 MESFET及旁栅电极 ,通过改变半导体特性测试仪的延迟时间参数 ,深入研究了不同沟道电流的数据采集时间对旁栅效应迟滞现象的影响 .发现当延迟时间超过 2 s时 ,迟滞现象基本消失 ,旁栅效应达到稳态 ,而且准静态地改变旁栅电压 ,沟道电流的变化会达到一稳定值 ,与过程无关 ,于是可以避免迟滞现象 .
MESFET and side gating electrode are produced by planar selectively implanted isolation process.The influence of different data collection time of channel current on the side gating hysteresis effect is studied by changing the delay time of semiconductor characteristic testing set.The hysteresis almost disappears and the side gating effect goes steady when the delay time is over 2s,and the change in channel current reaches a certain value that has nothing to do with the process,thereby avoiding the hysteresis,as long as our changing the side gating bias voltage in the quasi static state.Above phenomena theoretically are explained.[KH3/4D]
