摘要
给出了一种利用 FN振荡电流的极值 ,测量电子在薄栅 MOS结构的栅氧化层中的平均有效质量方法 .利用波的干涉方法来处理电子隧穿势垒的过程 ,方便地获得了出现极值时外加电压和电子的有效质量之间的分析表达式 .用干涉方法计算所得到的隧穿电子在不同的 MOS结构的二氧化硅介质层中的有效质量表明 :它一般在自由电子质量的 0 .5 2— 0 .84倍的范围 .实验结果表明 :电子有效质量的值不随外加电压的变化而变化 ,并且对于相同的MOS结构 。
A method is proposed for measuring the effective electron mass in the gate oxide in a thin MOS structure by using the extrema of Fowler Nordheim tunneling current oscillations.The relation between the applied voltage and the effective electron mass is obtained by analyzing the process of electron tunneling the potential barrier with the interference methed.The effective electron mass in a silicon dioxide with different structure is also obtained which is 0 52 to 0 84 of the free electron in mass.The experimental results show that the effective mass of an electron can be treated as constant while the gate voltage varies.With the same MOS structure,the electron might have the same effective electron mass.
基金
国家重点基础研究项目 (G2 0 0 0 -0 3 65 0 3 )
国家教育部博士点基金 (970 0 0 113 )
