摘要
采用高频 C- V曲线方法 ,研究了 5 0 nm及 15 nm MOS电容电离辐射空穴陷阱及界面态的建立过程 .二种样品电离辐射空穴陷阱电荷密度在 1× 10 3Gy(Si)剂量下近乎相同 ,而在大于 3× 10 3Gy(Si)剂量下 ,5 0 nm MOS电容的电荷密度约为 15 nm MOS电容的 2倍 .利用电离辐射后的隧道退火效应 ,计算出二种样品电离辐射陷阱电荷在Si- Si O2 界面附近分布的距离均约为 4nm .
The processes of generating a trapped positive hole charge and building up an interface state due to the ionizing radiation in MOS capacitors with the gate oxide thickness of 50nm and 15nm,are studied by using the HF C V curve method.It is found that the densities of trapped positive hole charge are near the same under 1×10 3Gy(Si) total radiation dose for two samples,and the density of 50nm sample is about 2 times of 15nm sample under total radiation dose more than 3×10 3Gy(Si).For two samples,the distribution distances of ionizing radiation trapped charge in the vicinity of Si SiO 2 interface are calculated to be 4nm by using the tunneling effect after ionizing radiation.
