摘要
简单分析了碟型微腔激光器中的激射模式及自发发射系数。采用反应离子刻蚀和选择性刻蚀方法蚀刻出InGaAs InGaAsP多量子阱 (MQW)碟型激光器 ,碟直径 3 μm ,在液氮温度下进行光抽运实验 ,观察其模式特性。实现了单模激射 ,波长 1 5 μm ,抽运阈值 18μW。
The lasing modes and the spontaneous emission factors of microdisk lasers are simply analyzed. InGaAs/InGaAsP multiple quantum wells (MQWs) microdisk lasers are fabricated by using the methods of active ion etching (RIE) and selective chemical etching. The diameter of the microdisk lasers was 3 μm. InGaAs/InGaAsP MQWs microdisk lasers cooled by liquid nitrogen was optically pumped. The single-mode lasing at 1.506 μm wavelength with threshold pump power about 18 μW is obtained.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2001年第8期681-684,共4页
Chinese Journal of Lasers
基金
中国科学院"九五"重大项目
国家自然科学基金资助项目