摘要
提出了锗硅材料禁带宽度随锗含量、温度及掺杂浓度变化的经验公式 ,改善了以往经验公式局限性较大的缺点 ,拓宽了公式的使用范围 .分析并计算了不同温度、掺杂浓度以及不同材料的禁带变窄量 ,与实验数据进行了对比 ,两者符合得很好 .
An empirical method is proposed for determining the total bandgap narrowing in the base of a SiGe HBT,which is a function of temperature,impurity concentration and germanium fraction.Calculated values have been obtained for a wide range of boron base doping concentrations at different temperatures.The results are very comparable with the theoretical and experimental results given by the literature.
关键词
掺杂浓度
温度
锗
锗硅材料
禁带宽度
SiGe base material
bandgap narrowing
Fermi level
degenerate semiconductor
