摘要
用一种比较简单的 Jaffe近似方法计算了质子在 Si O2 中的电子空穴对的逃逸率 ,讨论了辐照偏置、电场、质子入射角度、质子能量等对逃逸产额的影响 .得到了电子空穴对复合逃逸率与质子能量、电场成正比的结果 .计算结果与实验结果的比较 ,说明了 Jaffe近似方法可以比较正确地描述质子在二氧化硅中的总剂量效应 .
The Columnar Model is introduced in details.The recombination along the track of protons with the energy below 3MeV is calculated.Theoretical and experimental results are in good agreement with each other,as indicates this method can predict the actual total dose effect of the transistors.
