摘要
针对 SOI器件中的瞬态浮体效应进行了一系列的数值模拟 ,通过改变器件参数 ,比较系统地考察了 SOI器件中瞬态浮体效应 ,同时也研究和分析了瞬态浮体效应对 CMOS/SOI电路 (以环振电路为例 )的影响 ,并提出了抑制器件浮体效应的器件结构和参数优化设计 .
The behavior of transient floating-body effect in SOI MOSFET is simulated.The performance of the device is systematically reviewed by changing the parameters of the device.The influence of the transient floating body on CMOS/SOI circuits is also studied and analyzed,taking a ring oscillator as an example.A device structure is proposed to control the floating-body effect as well as the optimum design of the parameters.
基金
国家重点基础研究专项基金 ( 2 0 0 0 0 36 5 )
国家自然科学基金 ( No.6 9976 0 0 1)资助项目~~
